An RC-triggered ESD clamp for high-voltage BCD CMOS processes
نویسندگان
چکیده
منابع مشابه
An RC-triggered ESD clamp for high-voltage BCD CMOS processes
This paper presents a novel RC-triggered, field-effect transistor (FET)-based power clamp that can be used in high-voltage complementary metal oxide semiconductor (CMOS) processes. A simple two-stage design provides a fast trigger while keeping the clamp transistor on for much longer than the triggering duration without the need for an additional digital latching circuit. As the presented techn...
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ژورنال
عنوان ژورنال: TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES
سال: 2017
ISSN: 1300-0632,1303-6203
DOI: 10.3906/elk-1610-49